Mask and method for patterning a semiconductor wafer

ABSTRACT

A mask and method for patterning a semiconductor wafer is disclosed. A mask set is fabricated on a transparent substrate. A mask layer comprising mask region elements that transmit light is disposed on the substrate, wherein each mask element is segmented into a plurality of segments.

TECHNICAL FIELD

This invention relates generally to the fabrication of semiconductordevices and particularly to a patterning mask and method.

BACKGROUND

The accurate reproduction of patterns on the surface of a semiconductorsubstrate is critical to the proper fabrication of semiconductordevices. The semiconductor substrate may have undergone previousfabrication processes and may already feature layers and structurescreated by those fabrication processes. Improperly reproduced patternscan result in semiconductor devices that do not operate to designspecifications or do not operate at all. For example, transistors can becreated with improperly sized gates, conductors can be created that areshort circuited or open circuited with other conductors or devices,structures can be created with wrong geometries, and so forth.Improperly reproduced patterns can reduce the yield of the fabricationprocess, thereby increasing the overall cost of the product. Thereproduction process typically involves the use of optical lithographyto reproduce the patterns onto the surface of the semiconductorsubstrate that is subsequently followed with a variety of processes toeither subtract (for example, etch) and add (for example, deposit)materials from and to the semiconductor substrate.

However, as the dimensions of the structures making up the patternscontinue to become smaller, their sizes approach (in some cases, thedimensions of the structures are smaller than) wavelength of the lightused in optical lithography, the interference and processing effects cancause distortions and deviations in the patterns as they are reproducedonto the semiconductor substrate. In addition to the relationshipbetween structures of the patterns and the wavelengths of the light,other factors that can cause distortion include the numerical apertureof the imaging system and the minimum pitch between structures in thepattern. The result being a reproduced pattern having a dramaticallydifferent appearance from the pattern being reproduced, also known asthe intended pattern. The distortions and deviations in the reproducedpattern are dependent upon the characteristics of the pattern, such asthe shape and size of the structures in the pattern, the presence ofneighboring patterns and structures around the pattern, as well as theprocess conditions. For example, the interactions of the light with thestructures making up a pattern can result in the reproduced patternhaving rounded corners, bulges towards another elements, and so forth.

With reference now to FIGS. 1 a and 1 b, there are shown diagramsillustrating an exemplary pattern used in semiconductor devicefabrication and a simulated reproduced pattern on a semiconductorsubstrate. The diagram shown in FIG. 1 a illustrates a pattern 100 thatis to be reproduced on a semiconductor wafer. The pattern 100 includes aplurality of structures, such as structure 105, structure 106, structure107, structure 108, and structure 109. Ideally, there will be aone-to-one correspondence between the pattern 100 and the reproducedpattern on the semiconductor substrate.

The diagram shown in FIG. 1 b illustrates a simulation of the pattern100 as it is reproduced onto the semiconductor substrate. For example,if a threshold photoresist model is used and the dose is set to a valueof 3.3 times the dose-to-clear (i.e., the dose required to develop theresist in a large clear area), then intensities of greater than or equal0.3 will print in the photoresist. These thresholds are shown in FIG. 1b. The diagram illustrates that the more isolated regions of the pattern100 reproduce smaller, for example, pattern 130 and pattern 132, thanthe more nested regions, for example, pattern 134 and pattern 136.

Optical proximity correction (OPC) is a known technique whereinfragments of the structures making up the pattern can be modified(moved) so that associated mask patterns no longer look like theintended pattern, but through the previously discussed interactionsbetween the light and the structures, the reproduced pattern on thesemiconductor substrate made using the modified mask patterns will havean appearance that is closer to the intended pattern in appearance thanthe reproduced pattern made using the unmodified patterns. OPC isnormally performed using computer-aided design (CAD) tools and involvesthe partitioning of edges of structures of a pattern into multiplefragments, which can be moved around to yield the desired reproducedpattern.

In some cases, however, conventional OPC techniques fail to adequatelycorrect for pattern deviations because the required patternmodifications on the mask would violate mask design rules that defineminimum line width and line spacing. This is particularly an issue withsome resolution enhancement techniques using alternate phase shift masks(AltPSM) or attenuated phase shift masks where large deviations in themask geometry could be required to affect small changes in the imagegeometry on the target wafer. What is needed are improvements toresolution enhancement techniques for reproducing patterns with auniform width in cases where the use of conventional OPC techniques areimpractical.

SUMMARY OF THE INVENTION

In one embodiment, a mask set is fabricated on a transparent substrate.A mask layer including mask region elements that transmit light isdisposed on the substrate. Each mask element is segmented into aplurality of segments.

The foregoing has outlined rather broadly features of the presentinvention. Additional features of the invention will be describedhereinafter which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present invention. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the invention as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawing, in which:

FIGS. 1 a-1 b are exemplary figures describing photolithography processand its difficulties;

FIG. 2 is a diagram of the photolithography system;

FIGS. 3 a-3 c are diagrams of a composite pattern and various masklayers decomposed from the composite pattern;

FIGS. 4 a-4 c are composite patterns describing a derivation of thepreferred embodiment of the present invention;

FIG. 5 is a graph of parameters pertaining to the preferred embodimentof the present invention;

FIG. 6 is a composite pattern, according to the preferred embodiment ofthe present invention;

FIG. 7 is a composite pattern, according to an alternate embodiment ofthe present invention;

FIG. 8 is a composite pattern, according to an alternate embodiment ofthe present invention;

FIG. 9 is a composite pattern, according to an alternate embodiment ofthe present invention;

FIGS. 10 a-10 b are flowcharts describing an implementation of someembodiments of the present invention;

Corresponding numerals and symbols in different figures generally referto corresponding parts unless otherwise indicated. The figures are drawnto clearly illustrate the relevant aspects of the preferred embodimentsand are not necessarily drawn to scale. To more clearly illustratecertain embodiments, a letter indicating variations of the samestructure, material, or process step may follow a figure number.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of preferred embodiments are discussed in detailbelow. It should be appreciated, however, that the present inventionprovides many applicable inventive concepts that may be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the invention,and do not limit the scope of the invention.

The present invention will be described with respect to preferredembodiments in a specific context, namely an optical lithography systemfor the reproduction of patterns of very small dimensions. The inventionmay also be applied, however, to semiconductor fabricating processeswith other forms of lithography wherein the wavelength of theelectromagnetic waves used to transfer the patterns approaches thedimensions of the patterns. The invention can also be used inlithography processes outside the semiconductor field. For example, theinvention can be applied to lithography processes where an interactionbetween the wavelength, the numerical aperture of the imaging system anda minimum pitch between structures can cause distortions in thereproduction of mask patterns.

In various embodiments of the invention, the mask can be designed toimprove the pattern and structures created on the surface of the siliconwafer. An apparatus 200 for patterning the surface of a semiconductorwafer 210 is shown in FIG. 2. A stage 202 is adapted to support asemiconductor wafer 210. The stage 202 may be adapted to move the entirewafer 210 from position to position in order to expose portions of aresist over the wafer 210 surface during the patterning process. Thestage 202 may be mounted on a base, not shown. The stage 202 is adaptedto securely hold the wafer 210 in place. A lens 208 is disposed abovethe wafer 210. Lens 208 typically comprises a demagnification lens thatreduces the image transferred to the wafer 30 by 4-5×, for example.While lens 208 is depicted in the figure as a single lens, lens 208 willin most cases include a system of lenses. Alternatively, no lens 208 maybe required if a 1:1 ratio magnification scheme is used for transferringthe pattern from the mask 206 to the wafer 210. A mask 206 having thedesired pattern to be transferred to the wafer 210 is disposed abovelens 208. A light or energy source 204 is disposed above mask 206, asshown.

To pattern the wafer 210, the light source 204 which may comprise alaser or ultraviolet light, for example, is illuminated. The lightpasses through the mask 206, through demagnification lens 208, andexposes portions of photoresist on the top surface of the semiconductorwafer 210.

There are various types of exposure tools that function similarly to theapparatus 200 described and illustrated in FIG. 2. In a step and repeatapparatus, the mask 206 pattern is transferred onto a section of thewafer 210 at a time, and a stage 202 moves the wafer 210 from point topoint, exposing the wafer 210 surface in a plurality of steps. Analternative apparatus used to pattern and expose a wafer 210 surface isknown as a step and scan apparatus, for example.

In the preferred embodiment of the present invention, enhancementtechniques are used to modify the patterns on mask 206 and therebyimprove the integrity of the exposed images on the wafer 210. In aconventional integrated circuit lithography system, an ideal maskpattern using a given mask technique is designed for a given integratedcircuit layout without small geometry imaging distortions being takeninto account. The ideal mask geometry is then processed using OPCtechniques wherein the mask pattern geometry is adjusted to compensatefor imaging distortions. Some mask techniques, however, creategeometries that are not completely correctable using conventional OPCtechniques.

One commonly used mask technique uses an alternating phase shift mask(altPSM). AItPSM is a resolution enhancement method which uses specifictypes of masks. As shown in FIG. 3 a, a known alternating phase shiftmask includes two alternating phase mask structures, 305 and 306 whichpass light, with the remaining part of the mask being opaque. The firststructure 305 may pass light with a phase shift of 0°, while the secondstructure 306 may pass light at 180°. When the mask 206 is exposed to alight source, the phase shifted light passing through mask elements 305and 306 to expose the regions surrounded by target elements 315.Typically a trim mask (not shown) is used to expose the regions at theend of the structure to ensure that the originally non-exposed areastays within the bounds defined by the target elements 315. While a trimmask is typically used in the altPSM technique, it is not typically usedin other mask techniques such as attenuated PSM and binary masks.

While the altPSM technique combined with some known OPC technique iseffective at exposing the photoresist to patterns that are close to thedesired target, there are still some major deviations from the target315 caused by mask corner proximity effects caused by the typicallyhighly coherent light sources used in the exposure process. FIG. 3aillustrates the problem of necking. Structures 305 and 306 represent thephase masks, structure 315 represents the target structures, andstructure 302 represents the actual exposed pattern. The trim maskstructure is not shown on the diagram for simplicity. When the maskstructures are used as shown, a narrow area 303 or “neck” will result.Such necking and across device line-width variations (ADLV), in general,can result in shorts, opens, and other device failures in the resultingsemiconductor circuit. Such necking also worsens through focus, raisingthe risk of catastrophic openings in the resist. While this exampleshows the necking phenomenon in the context of altPSM, necking can alsooccur in other forms of exposure such as attenuated PSM, binary masks,and other mask techniques.

One possible and known technique that could be used to correct theproblem of necking is to use OPC to adjust the mask to compensate forthe necking, as shown in FIG. 3 b. In order to compensate for thenecking, gap 312 and projection 313 are created in the phase masklayers. Additionally, the gap 310 at the end of the pattern is narrowed,thus reducing magnitude of the necking in resultant pattern 304. OPC isalso applied to the trim mask (not shown), but its effect is alsoreflected in the imaged pattern 304. A disadvantage with this solution,however, lies in the fact that some resolution enhancement techniques,such as altPSM have a low mask error enhancement factor (MEEF). MEEF isdefined as the ratio of the amount of dimensional change in a maskfeature normalized to wafer dimensions, to the change in dimension ofthe resultant resist feature. In the present embodiment process, MEEFvalues of 0.5 are typical, meaning that if the resultant image needs tobe adjusted by 10 nm, the mask would need to be adjusted by 20 nmmultiplied by the mask magnification factor, typically 4×. In very finegeometry processes, such as the one used by the present embodiment ofthe present invention, such large mask adjustments can potentiallyviolate the so called mask manufacturing rules. For example, gap 310 inFIG. 3 b may be too narrow for the mask to be reliably manufactured.Additionally, even when ignoring those manufacturing concerns, known OPCtechniques typically still are not able to correct the mask patternadequately. Some necking typically remains due to limitations of theknown OPC techniques such as the fragmentation granularity orinappropriate set evaluation points.

FIG. 3 c shows an example of what would happen if gap 310 were widenedto conform to the mask design rules. When gap 310 is widened, necking iseven less adequately compensated and the resultant pattern 304 does notsufficiently conform to the target structure 315.

Another solution to the necking problem is to extend line-ends evenfurther “outside” the active gate area. A major disadvantage to thissolution, however, is that chip area must be sacrificed to accommodatethe increased line ends. Such an increase in chip area will increase thecost of the resulting integrated circuit.

FIGS. 4 a-4 c illustrate another solution to the necking problem thatforms the basis of a preferred embodiment of the present invention.

In one solution shown in FIG. 4 a, it is shown that if a slot 410 is cutthrough the phase masks 305 and 306 approximately at the point where thenecking in the prior resultant etch pattern 304 is most prominent,resultant pattern 404 is straightened out, but the necking is pushedfurther down the length of the pattern 404, especially when compensatingfor the resulting line width deviations with OPC (not shown). This isbecause the newly generated corners resulting from slot 410 of the phasemask cause necking further down at about the same distance as theoriginal neck from the original corners of the line-end. These slots canbe replicated so that phase mask sections 305 and 306 are divided intosegments as shown in FIG. 4 b.

Turning to FIG. 4 c, showing a preferred embodiment of the presentinvention after OPC has been applied to both the phase mask as well asthe trim mask (not shown), it can be seen that the creation ofadditional slots or segments in phase mask sections 305 and 306, has theeffect of reducing the effect of necking in the resultant pattern 404.In conditions were the light source is very coherent with strongproximity effects, the necking itself and its reduction is predictableand repeatable. For altPSM, a very coherent light source is typicallyused.

The most significant variables that effect necking are segment gap width420, segment pitch 422, exposure wavelength, numerical aperture, and thepartial coherence factor, sigma. Other process variables can also affectnecking, but they typically exert a second order effect. The mostsignificant of these variables on the effect of necking is the segmentpitch 422. The segment gap width 420 contributes primarily to the widthof the resultant image 404, while the segment pitch 420 determines theamount of “waviness” of the resultant image 404.

FIG. 5 shows a graph of the difference between the widest and mostnarrow portion (waviness) of the resultant image 404 versus segment gappitch for possible embodiments of the present invention. As shown by thegraph, there are multiple gap pitches (labeled 501, 503, 505, & 507)that yield zero-waviness. The selection of these pitches is determinedby such factors as the amount of OPC needed, mask manufacturability, andtheir stability versus tolerances of influencing parameters. Pitch 505at about 180nm is an example of a suitable pitch because the segmentpitch of 180 nm is easily manufacturable in the present embodimentprocess, and because the slope about pitch 505 is minimal. Pitch 507 atabout 215 nm is even more preferred in terms of mask manufacturing, butthe higher slope at pitch 507 has the major disadvantage that for realdesigns the actually applied pitch may need to differ slightly tosuccessfully segment a given mask feature 305/306. Points 501 and 503are less desirable because the smaller pitch prevents more light fromreaching the resist, so the actually applied dose would have to be muchhigher, or the gap dimensions would drop below the mask manufacturinglimit.

A preferred embodiment of the present invention is shown in FIG. 6.Alternating phase mask features 305/306 are shown along with targetstructures 315. The trim mask is not shown for clarity. Each alternatingphase mask element 305/306 is segmented at a predefined pitch 422 andwith a predefined gap width.

An alternate embodiment of the present invention is shown in FIG. 7.Alternating phase mask features 305/306 are shown along with targetstructures 315. The trim mask is not shown for clarity. Each alternatingphase mask element 305/306, however, is segmented at multiple pitches702/704 and at multiple gap widths 710/712. If each of these pitchescorresponds to “zero-waviness” pitches in the graph in FIG. 5, then theresulting etched pattern may have a substantially minimal differencebetween neck width and bulge width. Following the “zero-waviness”pitches only, however, may not lead to the desired dimension because ofthe impact from the trim mask reaching down from the end. The lastsegment on the end may have a different pitch, combined with a differentgap width, to compensate for the effect of the trim mask.

This embodiment of the present invention shown in FIG. 7 can also beused if the desired phase mask elements' lengths are not a multiples ofa single preferred gap pitch 702. In other embodiments of the presentinvention, the segment pitch may be varied by altering the segmentlength and keeping a constant gap width 710, rather than keeping aconstant segment length 730 and altering the gap width 710/712 as shown.In yet other embodiments, both the segment length 730 and the gap width710/712 may be varied.

In other embodiments of the present invention where the desired linelength is not a multiple of the preferred segment pitch, adjustments tothe line length may be made by starting all line ends at the preferredsegment pitch and solving pitch conflicts in the middle of the line bymaking gradual pitch transitions. In another, but similar embodiment,segments could start in the middle with the preferred line pitch andgradual pitch adjustments be made toward near the line-ends. In yetanother embodiment, adjustments could be made by making slightdeviations in the segment pitch of one particular phase shape.

FIG. 8 shows an alternate embodiment of the present invention were thephase mask elements 305/306 are partially segmented rather thancompletely segmented. This embodiment can be implemented with theembodiment of either FIG. 6 or FIG. 7. The length of each partialsegment can be determined empirically or mathematically.

FIG. 9 shows an alternate embodiment of the present invention wereopaque sections 902 are made in the phase mask elements 305/306 at asimilar periodicity as the segments in the other embodiments describedherein above. The size of the opaque sections 902 can be determinedempirically or mathematically.

Each of these masks can be used to fabricate a semiconductor deviceusing a system as shown in FIG. 2. In a preferred embodiment of thepresent invention, a mask 206 is provided with light transmissivesections broken up into elements as described above herein, and asemiconductor wafer 210 is provided on which a layer of resist isdeposited. The resist layer is irradiated by a light source 204 shiningthrough the mask 206 and preferably through a lens 208. Once the resistlayer is exposed to the light source 204, further processing isperformed to develop the resist and processing is continued.

The description of the embodiments of the present invention describedherein assume the use of a positive resist, where exposed portions ofresist are cleared from the wafer prior to processing. Other embodimentsof the present invention could use negative resist, where unexposedportions of resist are cleared from the wafer prior to processing. Usingnegative resist for embodiments of this invention where alternating PSM,attenuated PSM, or binary masks are used could be advantageous in thecreation of trenches. In other embodiments of the present invention, thetone of the feature could be inverted on the mask for both types ofresist types: negative tone and positive tone. In these cases, theblocking regions that comprise opaque or semi-transparent sections ofthe mask would be segmented rather than the light transparent segments.AltPSM, however, requires that the light transmissive sections be brokenup into elements.

FIGS. 10 a-10 b are flowcharts describing a typical implementationprocess of embodiments of the present invention.

Turning to FIG. 10 a, the general implementation flow starts with anoriginal geometric design 602. In the field of integrated circuitdesign, this could be an integrated circuit layout, however, in otherembodiments, this could be any other form of small geometry pattern.From the original design, an unadjusted mask geometry is generated instep 604. In some embodiments of the present invention, the unadjustedmask may comprise resolution enhancement techniques such as altPSM orattenuated PSM. In other embodiments of the present invention, this maskmay be a binary mask. After the unadjusted mask geometry is generated,the concepts of the present invention are applied and elements on themask are segmented in step 606 creating a segmented mask geometry. Instep 608, OPC techniques are applied to the segmented mask geometry, anda final mask in generated in step 610.

FIG. 10 b shows the process of determining mask segment geometries instep 606. To determine which elements are to be segmented, a search forcritical structures, which could be lines or spaces, below a certaindimensional limit in the unadjusted mask geometry is performed in step612. Typically this dimensional limit is on the order of the minimumprocess geometry. For example, in a 65 nm process, the dimensional limitis on the order of about 65 nm (wafer dimensions). Once the criticalstructures have been identified, neighboring elements that requiresegmentation are identified in step 614. In step 616, segment dimensionsare determined based on a predetermined algorithm. In some embodiments,this algorithm can be determined empirically and in other embodimentsthis algorithm can be mathematically based.

It will also be readily understood by those skilled in the art thatmaterials and methods may be varied while remaining within the scope ofthe present invention. It is also appreciated that the present inventionprovides many applicable inventive concepts other than the specificcontexts used to illustrate preferred embodiments. Accordingly, theappended claims are intended to include within their scope suchprocesses, machines, manufacture, compositions of matter, means,methods, or steps.

1. A method of making a semiconductor device, the method comprising:providing a mask with a pattern formed thereon, the mask including afirst mask layer comprising mask region elements, wherein each maskelement is segmented into a plurality of segments; providing asemiconductor wafer having a resist layer formed thereon; irradiatingthe resist layer through the mask to expose an upper surface of thewafer thereby forming a resulting pattern; and performing a process toaffect the upper surface of the wafer.
 2. The method of claim 1, whereinthe mask region elements comprise adjacent mask region elements.
 3. Themethod of claim 1, wherein the mask layer comprises an alternating phaseshift mask and wherein each mask element transmits light.
 4. The methodof claim 3, wherein the mask further comprises providing a second maskwith trim elements and irradiating the resist layer through the secondmask.
 5. The method of claim 1, wherein the mask layer comprises anattenuated phase shift mask or a binary mask and wherein each maskelement transmits light.
 6. The method of claim 1, wherein the masklayer comprises an attenuated phase shift mask or a binary mask andwherein each mask element is semi-transparent or opaque.
 7. The methodof claim 1, wherein each mask element is segmented by a predeterminedpitch, and wherein there is a predetermined gap between segments.
 8. Themethod of claim 7, wherein the predetermined pitch and predetermined gapbetween segments is optimized to reduce line-width waviness of theresulting pattern.
 9. The method of claim 7, wherein the predeterminedpitch and predetermined gap between segments is periodic.
 10. The methodof claim 7, wherein the predetermined pitches and predetermined gapsbetween segments of the mask element are asymmetric.
 11. The method ofclaim 1, wherein at least one mask element segment is connected toanother mask element segment within the same segment, the segmentconnection being of the same mask material as the mask element.
 12. Themethod of claim 11, wherein a least one segment within a mask elementfurther comprises a blocking region, the blocking region comprising anopaque or semi-transparent area.
 13. The method of claim 1, wherein theresist layer comprises positive resist.
 14. The method of claim 1,wherein the resist layer comprises negative resist.
 15. A method ofmaking a semiconductor device, the method comprising: providing a maskwith a pattern formed thereon, the pattern including at least twosubstantially parallel edges, the substantially parallel edges beingseparated by a region of a first tone value, the region of the firsttone value being divided into a plurality of segments, each segmentseparated from a neighboring segment by a blocking region, the blockingregion comprising a region of a second tone value, wherein the secondtone value is opposite of the first tone value; providing asemiconductor wafer having a resist layer formed thereon; irradiatingthe resist layer through the mask to expose an upper surface of thewafer forming a resulting pattern; removing a portion of the resistbased upon the resulting pattern; and performing a process to affect theupper surface of the wafer, a portion of the upper surface beingaffected being related to the resulting pattern.
 16. The method of claim15, wherein each segment is separated from a neighboring segment by ablocking region that extends from one of the substantially paralleledges to a neighboring one of the substantially parallel edges, whereinthe blocking region comprises a region of the second tone value.
 17. Themethod of claim 16, wherein the region of the first tone value isdivided into three segments being divided by two blocking regions havingdifferent widths, the blocking regions comprising regions of the secondtone value.
 18. The method of claim 17, wherein the region of the firsttone value is divided into four segments being divided by blockingregions, each of the three blocking regions having a different widthfrom the other two blocking regions, the blocking regions comprisingregions of the second tone value.
 19. The method of claim 15, whereineach region of the first tone value is separated from a neighboringsegment by a block that is spaced between two neighboring ones of thesubstantially parallel edges, the block comprising a region of thesecond tone value.
 20. The method of claim 15, wherein each segment isseparated from a neighboring segment by at least one notch that extendsfrom one of the substantially parallel edges toward a neighboring one ofthe substantially parallel edges, the notch comprising a region of thesecond tone value.
 21. The method of claim 20, wherein each segment isseparated from a neighboring segment by a first notch that extends fromone of the substantially parallel edges toward a neighboring one of thesubstantially parallel edges and a second notch that extends from theneighboring one of the substantially parallel edges toward the one ofthe substantially parallel edges, the notch comprising a region of thesecond tone value.
 22. The method of claim 20, wherein each segment isseparated from a neighboring segment by a first notch that extends fromone of the substantially parallel edges toward a neighboring one of thesubstantially parallel edges and a second notch that extends from theneighboring one of the substantially parallel edges toward the one ofthe substantially parallel edges, the notch comprising a region of thesecond tone value.
 23. The method of claim 15, wherein the region of thefirst tone value comprises a transmissive region and the regions of thesecond tone value comprises an opaque or semitransparent region.
 24. Themethod of claim 15, wherein the region of the first tone value comprisesan opaque or semitransparent region and the regions of the second tonevalue comprises a transmissive region.
 25. The method of claim 15,wherein the resist comprises a positive resist.
 26. The method of claim15, wherein the resist comprises a negative resist.
 27. A method forgenerating a mask pattern, the method comprising: receiving a first maskpattern from a given target pattern input; searching for criticalstructures within the first mask pattern, wherein critical structurescomprise lines and spaces within the first mask pattern below a criticaldimension; identifying correctable mask elements from the results of thesearching for critical structures; determining segment dimensions of thecorrectable mask elements based on a predetermined algorithm; andgenerating a second mask pattern incorporating the determined segmentdimensions.
 28. The method of claim 27, wherein the software executessteps further comprising generating a third mask pattern by performingan optical proximity correction on the second mask pattern.
 29. Themethod of claim 27, wherein the correctable mask structures compriseneighboring mask structures.
 30. The method of claim 27, wherein thecritical dimension is less than about 100 nm in terms of waferdimensions.
 31. The method of claim 27, wherein the method is performedby a computing device.
 32. A method of making a semiconductor device,the method comprising: providing an alternating phase shift mask layoutwith a pattern formed thereon, the pattern including first, second andthird pair of substantially parallel edges, the first pair beingseparated from the second pair by a first transmissive region thattransmits light at a first phase and the second pair being separatedfrom the third pair by a second transmissive region that transmits lightat a second phase, both the first and second transmissive regions beingdivided into a plurality of segments, each segment separated from aneighboring segment by a blocking region, the blocking region comprisingan opaque or semitransparent feature; providing a semiconductor waferhaving a resist layer formed thereon; irradiating the resist layerthrough the alternating phase shift mask to expose an upper surface ofthe wafer thereby forming a resulting pattern, the resulting patternincluding the first, second and third substantially parallel pairs ofedges; and performing a process to affect the upper surface of the waferin a pattern based upon the resulting pattern.
 33. The method of claim32, wherein the first phase differs from the second phase by 180degrees.
 34. The method of claim 32, wherein each segment of theplurality of segments has substantially the same size.
 35. The method ofclaim 34, wherein the blocking regions are located in a predeterminedpitch, the predetermined pitch being determined so as to reduceline-width waviness within the first, second and third pairs ofsubstantially parallel edges.
 36. A semiconductor mask comprising: atransparent substrate; and a mask layer comprising adjacent mask regionelements that transmit light disposed on the substrate, wherein eachmask element is segmented into a plurality of segments.
 37. Thesemiconductor mask of claim 36, wherein the adjacent mask regionselements comprise first mask region elements that transmit light with afirst phase shift and a second mask region elements that transmit lightwith a second phase shift with respect to the first set of mask regions,wherein the first set of mask regions alternate with the second set ofmask regions, and wherein each mask region element is segmented into aplurality of segments, and where the mask region element is separated bya blocking region on the mask substrate, the blocking region comprisingan opaque or semitransparent region.
 38. The semiconductor mask of claim36, wherein each mask element is segmented by a predetermined pitch,wherein there is a predetermined gap between segments and wherein thepredetermined pitch and predetermined gap between segments are periodic.39. The semiconductor mask of claim 38, wherein the segment pitch isadjusted near an end of a mask element.
 40. The semiconductor mask ofclaim 38, wherein the segment pitch is adjusted near the middle of amask element.